| PART |
Description |
Maker |
| 24C016 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution Inc
|
| 5962-8766505YA 5962-8766503YA 5962-8766507UA 5962- |
Complete High-Speed CMOS, 12-Bit ADC
CMOS, 8-Bit-Compatible, 12-Bit DAC
CMOS 12-Bit Buffered Multiplying DACs
16-Bit Microprocessor 16位微处理
|
Electronic Theatre Controls, Inc.
|
| M41000002M M41000002R M41000002W AM41DL3228GB30IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| W25X10L W25X20L W25X10LSNEG W25X80L W25X80LZPEG W2 |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X40A W25X40AVZPIG W25X20A |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| AM45DL3208GNBSP AM45DL3208G |
32 Mbit (4 M x 8-Bit/2 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
| TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
Toshiba Semiconductor
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MSM538052E MSM538052E-XXGS-K MSM538052E-XXRS MSM53 |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM, 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
|
OKI electronic componets
|
